650v n-channel mosfet.
2
1
13
3
TO-252-2L
1.Gate 2.Drain 3.Source
12
3 TO-220-3L
12 3
TO-251J-3L
* 7A, 650V, RDS(on)(typ.)=1.2@VGS=10V
* Low gate charge
* Low Crss
* F.
SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimi.
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